Charge-Packet-Ihitiated Switching of Metal Tunnel-Oxide-Silicon (MTOS) Junctions
نویسنده
چکیده
We report the switching of a bistable metal-tunnel oxide-silicon (MTOS) junction from a low-current state to a high current state by the insertion of a charge packet of minority carriers from a charge-coupied device input structure. For the 33-A tunnel oxide reported in this letter, a switching threshold of 630 pC for a 40 mils 2 device area was ~bserved. The transient switching time is al> plroximately 10--100 ms, depending upon the size of the injected charge packet.
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